Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs quantum wells
نویسندگان
چکیده
منابع مشابه
Characterization of quantum well structures using surface photovoltage spectroscopy
In this work a novel method to characterize quantum well (QW) structures and devices is presented. The method is based on the well-known surface photovoltage spectroscopy (SPS) and on numerical simulations. It is shown that the surface photovoltage is sensitive to the electron hole energy transition levels in the well layer as well as to features of other regions of the structure. The photovolt...
متن کاملIsing quantum Hall ferromagnet in magnetically doped quantum wells.
We report on the observation of the Ising quantum Hall ferromagnet with Curie temperature T(C) as high as 2 K in a modulation-doped (Cd,Mn)Te heterostructure. In this system field-induced crossing of Landau levels occurs due to the giant spin-splitting effect. Magnetoresistance data, collected over a wide range of temperatures, magnetic fields, tilt angles, and electron densities, are discussed...
متن کاملObservation of the quantum Hall effect in δ-doped SrTiO3
The quantum Hall effect is a macroscopic quantum phenomenon in a two-dimensional electron system. The two-dimensional electron system in SrTiO3 has sparked a great deal of interest, mainly because of the strong electron correlation effects expected from the 3d orbitals. Here we report the observation of the quantum Hall effect in a dilute La-doped SrTiO3-two-dimensional electron system, fabrica...
متن کاملAmbipolar Tunneling in Near-surface Quantum Wells
We study the photoluminescence from a near-surface quantum well in the regime of ambipolar tunneling to the surface states. Under steady-state excitation an electric field develops self-consistently due to the condition of equal tunneling currents for electrons and holes. The field induces a Stark shift of the photolumi-nescence signal which compares well with experimental data from near-surfac...
متن کاملGrowth and surface passivation of near-surface InGaAs quantum wells
The growth and surface passivation of near-surface InGaAs quantum wells (QWs) on GaAs (1 1 0) substrate have been investigated. Triangular shaped small islands, approximate areal density of 10 cm , are observed on metal organic vapor phase epitaxially grown GaAs single layer and InGaAs multi-quantum wells (MQWs) surfaces in a wide range of growth temperatures. By optimizing the growth condition...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Lithuanian Journal of Physics
سال: 2007
ISSN: 1648-8504
DOI: 10.3952/lithjphys.47311